| cena | |
|---|---|
| 500 | $5.127 |
| 1000 | $4.465 |
| Vgs (th) (Max) @ Id: | 2.5V @ 5.5mA |
|---|---|
| Balík dodávateľov zariadení: | Die |
| séria: | eGaN® |
| Rds Zap (Max) @ Id, Vgs: | 6.3 mOhm @ 20A, 5V |
| Výkon - Max: | - |
| obal: | Tape & Reel (TR) |
| Balík / puzdro: | Die |
| Prevádzková teplota: | -40°C ~ 150°C (TJ) |
| Typ montáže: | Surface Mount |
| Vstupná kapacita (Ciss) (Max) @ Vds: | 800pF @ 50V |
| Nabíjanie brány (Qg) (Max) @ Vgs: | 7nC @ 5V |
| Typ FET: | 2 N-Channel (Half Bridge) |
| Funkcia FET: | GaNFET (Gallium Nitride) |
| Vypustite na zdrojové napätie (Vdss): | 100V |
| Súčasný kontinuálny odtok (Id) pri 25 ° C: | 23A |
EPC2103ENG
TRANS GAN 2N-CH 80V BUMPED DIE
EPC2107ENGRT
TRANS GAN 3N-CH 100V BUMPED DIE
EPC2103ENGRT
TRANS GAN SYM HALF BRDG 80V
EPC2105ENGRT
MOSFET 2NCH 80V 9.5A DIE
EPC2102ENGRT
MOSFET ARRAY 2N-CH 60V DIE
EPC2104ENG
TRANS GAN 2N-CH 100V BUMPED DIE
EPC2108ENGRT
TRANS GAN 3N-CH BUMPED DIE
EPC2106ENGRT
TRANS GAN 2N-CH 100V BUMPED DIE
EPC2102ENG
TRANS GAN 2N-CH 60V BUMPED DIE
EPC2105ENG
TRANS GAN 2N-CH 80V BUMPED DIE
1PMT4109/TR13
DIODE ZENER 15V 1W DO216
SMBJ5954BE3/TR13
DIODE ZENER 160V 2W SMBJ
3EZ68D2/TR12
DIODE ZENER 68V 3W DO204AL
CDLL5240
DIODE ZENER 10V 10W DO213AB
1N743A
DIODE ZENER 160V 250MW DO35
SMBJ5937C/TR13
DIODE ZENER 33V 2W SMBJ
1N821AUR-1
DIODE ZENER 6.2V 500MW DO213AA
1N5728B
DIODE ZENER 4.7V 500MW DO35
JANTXV1N3020DUR-1
DIODE ZENER 10V 1W DO213AB
1PMT5934BT1
DIODE ZENER 24V 3.2W POWERMITE
