| Vgs (th) (Max) @ Id: | 2V @ 250µA |
|---|---|
| technológie: | MOSFET (Metal Oxide) |
| Balík dodávateľov zariadení: | I-Pak |
| séria: | HEXFET® |
| Rds Zap (Max) @ Id, Vgs: | 27 mOhm @ 25A, 10V |
| obal: | Tube |
| Balík / puzdro: | TO-251-3 Short Leads, IPak, TO-251AA |
| Typ montáže: | Through Hole |
| Vstupná kapacita (Ciss) (Max) @ Vds: | 1700pF @ 25V |
| Nabíjanie brány (Qg) (Max) @ Vgs: | 48nC @ 5V |
| Typ FET: | N-Channel |
| Funkcia FET: | - |
| Vypustite na zdrojové napätie (Vdss): | 55V |
| Súčasný kontinuálny odtok (Id) pri 25 ° C: | 42A (Tc) |
IRLU3103
MOSFET N-CH 30V 55A I-PAK
IRLU2705PBF
IRLU2703PBF
MOSFET N-CH 30V 23A I-PAK
IRLU2905ZPBF
MOSFET N-CH 55V 42A I-PAK
IRLU2703
MOSFET N-CH 30V 23A I-PAK
IRLU2905Z
MOSFET N-CH 55V 42A I-PAK
IRLU3103PBF
MOSFET N-CH 30V 55A I-PAK
IRLU2908
IRLU2705
MOSFET N-CH 55V 28A I-PAK
IRLU2905
MOSFET N-CH 55V 42A I-PAK
CQ220-12M SL
TRIAC 12A TO-220
IRFH8316TRPBF
MOSFET N-CH 30V 27A PQFN5X6
DMN3112SSS-13
MOSFET N-CH 30V 6A 8SOP
FGB40N60SM
IGBT 600V 80A 349W D2PAK
ATS-04D-62-C1-R0
HEATSINK 40X40X15MM L-TAB
ATS-21H-175-C3-R0
HEATSINK 35X35X10MM R-TAB T412
ATS-10G-52-C2-R0
HEATSINK 30X30X25MM L-TAB T766
ATS-21B-203-C3-R0
HEATSINK 54X54X10MM XCUT T412
ATS-20H-186-C3-R0
HEATSINK 40X40X35MM R-TAB T412
ATS-21A-19-C3-R0
HEATSINK 54X54X20MM XCUT T412
